GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Used to Indicate & Manually

Used to Indicate & Manually control Air or Gas flow Max 2000 cc/min

Special Hydrogenated Nitrile (HNBR) compounds can improve resistance to direct ozone

MTI will replace the unsatisfied substrate which has no film grown and no damage free of charge until you are satisfied within 15 days after receiving it

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Casing: SS304 or SS316

GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Used to Indicate & ManuallyGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers